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2.0-20.0 GHz GaAs MMIC 1W Power Amplifier
October 2006 - Rev 13-Oct-06
CMM0016 Features
Small Size: 2.32x1.30x0.076mm Integrated On-Chip DC Blocking Single Bias Operation Directly Cascadable - Fully Matched Unconditionally Stable P1dB: 29 dBm, Typ. @ 18 GHz Linear Gain: 9.5 dB, Typ. @ 18 GHz pHEMT Technology Silicon Nitride Passivation
Chip Diagram
Units: mm
Specifications (TA= 25C,Vdd = 12V)1
Parameters Units Min Typ Max
Frequency Range Linear Gain Gain Flatness Power Output: 2-18 GHz (@1 dB Gain Compression) Power Output: 2-20 GHz (@1 dB Gain Compression) P1dB Variation (over operating frequency) Saturated Output Power: 2-18 GHz Saturated Output Power: 2-20 GHz Input Return Loss Output Return Loss Current Thermal Resistance
GHz dB dB dBm dBm dBm dBm dBm dB dB mA C/W
2.0 8.5 28.5 26.5
20.0 12.5 1.5
5.0 29.5 27.5 -10.0 -10.0 730 15.7
650
690
Stability 2
Unconditionally Stable
Notes: 1. Tested on Celeritek Connectorized evaluation board (standard assembly condition detailed on page 4). 2. Stability factor measured on-wafer.
Absolute Maximum Ratings1
Parameter Rating
Die Attach and Bonding Procedures
Die Attach: Eutectic die attach is recommended. For eutectic die attach: Preform: AuSn (80% Au, 20% Sn); Stage Temperature: 290C, 5C; Handling Tool: Tweezers; Time: 1 min or less. Wire Bonding: Wire Size: 0.7 to 1.0 mil in diameter (prestressed); Thermocompression bonding is preferred over thermosonic bonding. For thermocompression bonding: Stage Temperature: 250C; Bond Tip Temperature: 150C; Bonding Tip Pressure: 18 to 40 gms depending on size of wire.
Drain Voltage 9.0V (min.) / 13.0V (max.) Drain Current 750 mA Continuous Power Dissipation 9.5 W Input Power 20 dBm Storage Temperature -50C to +150C Channel Temperature 175C Operating Backside Temperature -40C to (See note 2)
Notes: 1. Operation outside these limits can cause permanent damage. 2. Calculation maximum operating temperature: Tmax = 175-(Pdis [W] x 15.7) [C].
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 5
Characteristic Data and Specifications are subject to change without notice. (c)2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
2.0-20.0 GHz GaAs MMIC 1W Power Amplifier
October 2006 - Rev 13-Oct-06
CMM0016 Typical On-Wafer Scattering Parameters
(Vd = +12V, Idd = 700 mA, T = 25C, device in a 50 ohm system)
Frequency (MHz) (Mag) S11 (Ang) (Mag) S21 (Ang) (Mag) S12 (Ang) (Mag) S22 (Ang)
0.1 1.1 2.1 3.1 4.1 5.1 6.1 7.1 8.1 9.1 10.1 11.1 12.1 13.1 14.1 15.1 16.1 17.1 18.1 19.1 20.1 21.1 22.1 23.1 24.1 25.1 26.1 27.1 28.1 29.1 30.1 31.1 32.1 33.1 34.1 35.1 36.1 37.1 38.1 39.1 40.1
0.895 0.224 0.120 0.132 0.116 0.090 0.058 0.045 0.056 0.082 0.105 0.112 0.100 0.065 0.026 0.072 0.137 0.185 0.202 0.182 0.134 0.105 0.174 0.247 0.272 0.231 0.137 0.196 0.234 0.349 0.386 0.428 0.480 0.539 0.597 0.658 0.706 0.751 0.790 0.826 0.856
-27.46 -94.72 -115.66 -120.35 -142.53 -159.80 -155.91 -135.98 -111.34 -107.92 -116.81 -130.45 -145.03 -154.88 -114.03 -60.29 -72.11 -90.65 -109.59 -125.30 -132.98 -107.03 -94.92 -110.42 -132.47 -160.25 -141.31 -146.43 -150.80 170.45 130.23 92.93 60.25 34.23 12.71 -4.54 -19.16 -31.72 -42.32 -52.12 -60.30
0.374 2.819 2.845 2.912 2.906 2.870 2.848 2.839 2.863 2.929 3.014 3.087 3.119 3.119 3.123 3.163 3.237 3.312 3.326 3.296 3.213 3.088 3.039 3.136 3.242 2.672 2.001 2.259 2.569 0.720 0.247 0.104 0.042 0.023 0.014 0.013 0.007 0.004 0.001 0.003 0.001
-118.79 -167.62 137.27 98.39 64.29 31.44 -0.20 -31.59 -62.57 -94.08 -126.53 -160.15 165.56 131.34 97.11 62.54 26.78 -10.92 -50.17 -90.24 -131.48 -172.66 145.86 101.21 47.32 -12.38 -56.79 -104.68 153.51 68.96 26.46 -5.39 -28.72 -53.32 -63.64 -90.12 -169.84 138.88 141.98 125.45 -30.91
0.001 0.001 0.001 0.001 0.001 0.000 0.000 0.001 0.001 0.001 0.002 0.003 0.003 0.004 0.005 0.006 0.007 0.009 0.011 0.011 0.012 0.014 0.015 0.018 0.023 0.024 0.022 0.028 0.030 0.006 0.002 0.003 0.003 0.001 0.005 0.010 0.008 0.002 0.002 0.003 0.002
179.07 10.30 161.31 -24.81 99.46 -18.80 -15.21 -9.90 -17.50 -40.23 -66.05 -95.26 -127.63 -150.95 -177.36 157.71 130.91 105.19 69.44 34.20 4.93 -33.95 -73.77 -111.05 -158.10 149.27 119.19 69.82 -17.00 -100.97 -28.35 21.66 -5.04 11.16 -1.35 -44.00 -171.43 177.92 68.47 -55.70 -147.28
0.982 0.371 0.184 0.109 0.134 0.201 0.254 0.273 0.256 0.214 0.186 0.221 0.285 0.321 0.305 0.223 0.078 0.105 0.264 0.348 0.319 0.172 0.128 0.322 0.393 0.210 0.301 0.492 0.547 0.501 0.584 0.646 0.707 0.755 0.789 0.789 0.763 0.840 0.867 0.888 0.896
-30.49 172.50 155.95 176.74 -148.11 -144.37 -152.76 -163.80 -173.33 -176.04 -165.38 -153.79 -157.63 -171.26 170.18 149.10 131.73 -99.62 -123.96 -155.20 168.29 115.92 -27.54 -99.37 -159.52 107.34 -40.67 -112.02 109.01 -21.16 -59.24 -78.61 -91.05 -101.84 -111.75 -123.00 -120.14 -127.28 -134.25 -140.59 -146.39
S-Parameter Data Files are available online at: www.mimixbroadband.com
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 2 of 5
Characteristic Data and Specifications are subject to change without notice. (c)2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
2.0-20.0 GHz GaAs MMIC 1W Power Amplifier
October 2006 - Rev 13-Oct-06
CMM0016 Amplifier Measurements
Connectorized test fixture Vdd=12V, Idd=720m A 35.0 50.0
34.0
45.0
33.0
40.0
32.0
35.0
Output Power (dBm)
31.0
30.0
30.0
25.0
PAE (%)
29.0
20.0
Psat
28.0
15.0
P1dB
27.0
10.0
PAE
26.0
5.0
25.0 0 2 4 6 8 10 12 14 16 18 20 Frequency (GHz)
0.0
13 12 11 10 9 8 7 6 5 4 3 2 1 0 -1 -2 -3 -4 -5 -6 -7 0 2 4
CMM0016 Typical On-wafer S-parameter Data 12V, 660mA
15 10 5 0 -5 -10 -15 -20 -25 -30 -35 S11, S22 (dB) S21 K-factor S11 S22
Linear Gain (dB), K-factor
6
8
10 12 14 16 18 20 22 Frequency (GHz)
24 26 28 30 32
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 3 of 5
Characteristic Data and Specifications are subject to change without notice. (c)2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
2.0-20.0 GHz GaAs MMIC 1W Power Amplifier
October 2006 - Rev 13-Oct-06
CMM0016 Assembly Example
Note: 1. Eutectic attach on at least 30mil thick CuW or CuMo carrier is recommend. 2. For evaluation, a 1.4mil wire diameter lithium gold air coil has been used .
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 4 of 5
Characteristic Data and Specifications are subject to change without notice. (c)2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
2.0-20.0 GHz GaAs MMIC 1W Power Amplifier
October 2006 - Rev 13-Oct-06
CMM0016 Handling and Assembly Information
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: * Do not ingest. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die Mat DM6030HK or DM6030HK-Pt cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. For additional information please see the Mimix "Epoxy Specifications for Bare Die" application note. If eutectic mounting is used, then a fluxless gold-tin (AuSn) preform, approximately 0.001 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action to 2 ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold Germanium should be avoided). The work station temperature should be 310 C +/- 10 C. Exposure to these extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during placement. Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be avoided. Thermocompression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible.
Ordering Information
The CMM0016-BDis available in bare die and is shipped in Gel Pak. Part Number for Ordering Package CMM0016-BD Bare Die Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 5
Characteristic Data and Specifications are subject to change without notice. (c)2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.

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